Manufacturing Technology:Advanced Silicon Technology
Rated Current:2500 Amps
Operating Temperature Range:-40°C to 150°C
Insulation Resistance:≥ 10^13 Ohms
Max Collector Emitter Voltage:600V
Switching Frequency:Up to 5 kHz
Thermal Resistance:≤ 1.2°C/W
The Mitsubishi CM600YE2N-12F IGBT Transistor is engineered to deliver unparalleled performance in industrial automation environments. Its robust design ensures high efficiency and durability under demanding conditions.
Featuring advanced silicon technology, this transistor provides superior switching characteristics, making it ideal for complex control applications where precision and speed are paramount.
Operated within an extensive temperature range from -40°C to 150°C, it ensures reliable operation across a wide variety of industrial settings, from freezing cold to scorching hot environments.
With an insulation resistance exceeding 10^13 Ohms, the CM600YE2N-12F offers unparalleled safety and protection against electrical hazards, safeguarding your system and personnel.
Equipped with a maximum collector emitter voltage of 600V, it is capable of handling high power loads without degradation, ensuring efficient energy management in your industrial processes.
Offering a switching frequency up to 5 kHz, this IGBT Transistor ensures swift response times, enhancing operational efficiency and minimizing downtime.
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